![]() In the following paragraphs only the most important will be described, highlighting the main features through some electronic simulations. GaN Mosfet (2010 – Gallium Nitride Mosfet). SiC Mosfet (2000 – Silicon Carbide Mosfet) IGBT (1983 – Insulated Gate Bipolar Transistor) SIT (1975 – Static Induction Transistor) Power Mosfet (1970 – Metal oxide semiconductor field effect transistor) TRIAC (1958 – Triode Alternate Current Switch) īJT (1960 – Bipolar Junction Transistor) RCT (1957 – Reverse Conducting Thyristor) SCR (1957 – Silicon Controlled Rectifier) The controllable power and switching speeds have been improved in particular.įigure 1 shows, in a very broad sense, how technology has changed over the course of about 80 years of academic and industrial research. Power devices now perform a great deal better than they did in the past thanks to advancements in technology and the discovery of new semiconductors. ![]() This will decrease the size of the inductive parts and, ultimately, the system’s overall weight. It has been established that, in order to achieve high yields and low power dissipation, all power electronic devices are used as switches (ON and OFF), and, more specifically, in high frequency switching mode. To put it another way, the power circuit must be effective and the heat it generates must be removed by superior cooling systems. IntroductionĪ power electronic system must function with extremely high energy efficiency as its primary requirement. Power electronic components are static semiconductor devices that can control weak control signals to produce high output powers. Special electronic components that can withstand a high current intensity without damaging themselves or operating at extremely high temperatures are needed in order to switch, control, or divert this current. As seen in previous articles, the high current flows through cables and high section connections.
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